Hochvolt IGBT-Module

Module mit einer Sperrspannung zwischen 1700 und 6500 V.

Beratung

Team HY-LINE
Power Components
Telefon

089 / 614 503 10

  • Key features
  • Downloads
  • Hersteller
  • Artikel
  • Highest Reliability in Material and Processes:
    Improvement of power cycling capability
  • High robust design
  • Highest Quality Contols:
    - Static and switching test
    - 100% shipping inspection
  • HVIGBT and HVDIODE modules are available in rated volatages of 1,7kV, 2,5kV, 3,3kV, 4,5kV, 6,5kV and rated currents ranging from 200A to 2400A
  • 1,7kV HVIGBT modules with Light Punch Through Carrier Stored Trench Gate Bipolar Transistor (ÖPT-CSTBT(TM) technology and a new free-wheel diode design for reduced IGBT losses and suooressed diode oscillation
  • 3,3kV, 4,5kV, 6,5kV HVIGBT modules and diodes with 10,2kV isolated package available
  • New 3,3kV, 4,5kV, 6,5kV R-series IGBT Modules
    - Increased rated current and low loss performance
    - Increased rated torque capability to 22Nm
    - 10,2kV high isolation package available on request
    - Extended operating temperature and minimum storage temperature up to 150°C and -55°C respectively
    - High Robustness (Wide SOA)
  • New 1,7kV 1200A Dual Hybrid SiC Module
    - New 6th Generation IGBT chip, CSTB(TM) (III)
    - Extended maximum operation temperature and minimum storage temperature up to 150°C and -50°C respectively
    SiC Schottky-Barrier Diode
HV-Module_hy.pdf

Mitsubishi Electric ist Technologieführer im Bereich der IGBT-Module - mittlerweile in der 7. Generation - und Intelligenten Power-Module (IPM).

VCES
(V)
1700
2500
200 400 600 750 800 900 1000 1200 1500 1600 1800 2400
Single CM800HA-34H CM1200HA-34H
G1 (Cu) Dual CM600DY-34H
Chopper CM600E2Y-34H
Single CM1200HC-34H CM1600HC-34H CM1800HC-34H CM2400HC-34H
G3 (AlSiC) CM800DZ-34H
Dual
CM800DZB-34N1
G4 (Cu) Dual CM1200DB-34N1
CM1200HCB-34N1 CM1800HC-34N1 CM2400HC-34N1
Single
CM1800HCB-34N1 CM2400HCB-34N1
G4 (AlSiC)
Dual CM1200DC-34N1
Chopper CM1200E4C-34N1
CM1200DC-34S4
G5 (AlSiC) Dual
CMH1200DC-34S4,5
Single CM800HA-50H CM1200HA-50H
G1 (Cu)
Dual CM400DY-50H
G2 (Cu) Single CM800HB-50H CM1200HB-50H
G3 (AlSiC) Single CM1200HC-50H
Single CM800HA-66H CM1200HA-66H
G1 (Cu)
Dual CM400DY-66H
G2 (Cu) Single CM800HB-66H CM1200HB-66H
CM1200HC-66H CM1500HC-66R3
Single CM400HG-66H2 CM800HC-66H CM1000HC-66R3
CM1200HG-66H2 CM1500HG-66R2,3
G3 (AlSiC)
CM800E2C-66H
Chopper CM800E4C-66H CM1000E4C-66R3
CM800E6C-66H
G2 (Cu) Single CM400HB-90H CM600HB-90H CM900HB-90H
CM1200HC-90R
CM800HC-90R3 CM900HC-90H
G3 (AISiC) Single CM600HG-90H2 CM1200HC-90RA3
CM800HG-90R2,3 CM900HG-90H2
CM1200HG-90R2,3
Single CM200HG-130H2 CM400HG-130H2 CM600HG-130H2 CM750HG-130R2,3
G3 (AlSiC)
Chopper CM400E4G-130H2
6500
1 CSTBTTM Chip Technology 2 High Isolation Package (10.2kVrms) 3 New R-Series 4 CSTBTTM (III) Chip Technology 5 SiC Schottky-Barrier Diode

HY-LINE Contact

Helpdesk 089 / 614 503 10

E-Mail power@hy-line.de