PI5101 µRDS(on)FET

The PI5101 µRDS(on) FET™ solution combines a
high-performance 5 V, 360 µ? lateral N-Channel MOSFET with a thermally enhanced high-density
land-grid-array (LGA) package to enable world class performance in the footprint area of an industry standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.

Beratung

Team HY-LINE
Power Components
Telefon

089 / 614 503 10

  • Key features
  • Downloads
  • Hersteller
  • High-performance 5V, 360µ? lateral N-Channel MOSFET
  • Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
  • Outperforms conventional Trench MOSFETs and enables very low loss operation
  • Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package

 

 

fo_PI5101_1.1_201111.pdf

Der US-Hersteller VICOR liefert sehr leistungsfähige, robuste und flexible Module für Stromversorgungen.

HY-LINE Contact

Helpdesk 089 / 614 503 10

E-Mail power@hy-line.de